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? semiconductor components industries, llc, 2015 november, 2015 ? rev. 2 1 publication order number: nlas3158/d nlas3158 low voltage dual spdt analog switch dual 2:1 multiplexer the nlas3158 is an advanced cmos analog switch fabricated with silicon gate cmos technology. it achieves very low propagation delay and rds on resistances while maintaining cmos low power dissipation. analog and digital voltages that may vary across the full power?supply range (from v cc to gnd). this device is a drop in replacement for the pi5a3158. the select pin has overvoltage protection that allows voltages above v cc, up to 7.0 v to be present on the pin without damage or disruption of operation of the part, regardless of the operating voltage. features ? high speed: t pd = 1.0 ns (typ) at v cc = 5.0 v ? low power dissipation: i cc = 1.0 a (max) at t a = 25 c ? standard cmos logic levels ? high bandwidth, improved linearity ? low rds on : 8 max at 3 v ? break before make circuitry, prevents inadvertent shorts ? this is a pb?free device typical applications ? switches standard ntsc/pal video, audio, spdif and hdtv ? may be used for clock switching, data mux?ing, etc. ? can switch balanced signal pairs, e.g. lvds 200 mb/s important information ? latchup performance exceeds 300 ma ? pin for pin drop in for pi5a3158 ? wdfn package, 3x1 mm ? esd performance: human body model; 2000 v; machine model; 200 v ? extended automotive temperature range ?55 c to +125 c (see appendix a) wdfn12 mn suffix case 485ag www. onsemi.com marking diagram as = specific device code m = date code = pb?free package (note: microdot may be in either location) l h function table select input function b0 connected to a b1 connected to a 1 12 1 asm see detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. ordering information figure 1. pinout (top view) s 1 a 0 gnd a 1 0 b 0 1 2 3 12 10 v cc 11 4 5 6 9 7 8 1 b 0 gnd 1 b 1 v cc s 0 0 b 1
nlas3158 www. onsemi.com 2 maximum ratings rating symbol value unit supply voltage v cc ?0.5 to +7.0 v dc switch input voltage (note 1) v is ?0.5 to v cc + 0.5 v dc input voltage (note 1) v in ?0.5 to + 7.0 v dc input diode current @ v in 0 v i ik ?50 ma dc output current i out 128 ma dc v cc or ground current i cc /i gnd +100 ma storage temperature range t stg ?65 to +150 c junction temperature under bias t j 150 c junction lead temperature (soldering, 10 seconds) t l 260 c power dissipation @ +85 c p d 180 mw stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be af fected. 1. the input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed. recommended opera ting conditions (note 2) characteristic symbol min max unit supply voltage operating v cc 1.65 5.5 v select input voltage v in 0 v cc v switch input voltage v is 0 v cc v output v oltage v out 0 v cc v operating t emperature t a ?55 +125 c input rise and fall time control input v cc = 2.3 v?3.6 v control input v cc = 4.5 v?5.5 v t r , t f 0 0 10 5.0 ns/v thermal resistance ja ? 350 c/w functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresses beyond th e recommended operating ranges limits may affect device reliability. 2. select input must be held high or low, it must not float.
nlas3158 www. onsemi.com 3 dc electrical characteristics (t a = ?40 c to +85 c) symbo l parameter test conditions v cc (v) t a = +25 c t a = ?40 c to +85 c uni t min typ max min max v ih high level input v oltage 1.65?1.95 2.3?5.5 0.75 v cc 0.7 v cc v v il low level input v oltage 1.65?1.95 2.3?5.5 0.25 v cc 0.3 v cc v i in input leakage current 0 v in 5.5 v 0?5.5 0.0 5 0.1 1 a i off off state leakage current 0 a, b v cc 1.65?5.5 0.0 5 0.1 1 a r on switch on resistance (note 3) v in = 0 v, i o = 30 ma v in = 2.4 v, i o = ?30 ma v in = 4.5 v, i o = ?30 ma 4.5 3.0 5.0 7.0 6.0 8.0 13 6.0 8.0 13 v in = 0 v, i o = 24 ma v in = 3 v, i o = ?24 ma 3.0 4.0 10 8.0 19 8.0 19 v in = 0 v, i o = 8 ma v in = 2.3 v, i o = ?8 ma 2.3 5.0 13 9.0 24 9.0 24 v in = 0 v, i o = 4 ma v in = 1.65 v, i o = ?4 ma 1.65 6.5 17 12 39 12 39 i cc quiescent supply current all channels on or off v in = v cc or gnd i out = 0 5.5 1.0 10 a analog signal range v cc 0 v cc 0 v cc v r range on resistance over signal range (note 3) (note 7) i a = ?30 ma, 0 v bn v cc i a = ?24 ma, 0 v bn v cc i a = ?8 ma, 0 v bn v cc i a = ?4 ma, 0 v bn v cc 4.5 3.0 2.3 1.65 25 50 100 300 r on on resistance match between channels (note 3) (note 4) (note 5) i a = ?30 ma, v bn = 3.15 i a = ?24 ma, v bn = 2.1 i a = ?8 ma, v bn = 1.6 i a = ?4 ma, v bn = 1.15 4.5 3.0 2.3 1.65 0.15 0.2 0.5 0.5 r flat on resistance flatness (note 3) (note 4) (note 6) i a = ?30 ma, 0 v bn v cc i a = ?24 ma, 0 v bn v cc i a = ?8 ma, 0 v bn v cc i a = ?4 ma, 0 v bn v cc 5.0 3.3 2.5 1.8 5.0 10 24 110 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. measured by the voltage drop between a and b pins at the indicated current through the switch. on resistance is determined by the lower of the voltages on the two (a or b ports). 4. parameter is characterized but not tested in production. 5. r on = r on max ? r on min measured at identical v cc , temperature and voltage levels. 6. flatness is defined as the difference between the maximum and minimum value of on resistance over the specified range of cond itions. 7. guaranteed by design.
nlas3158 www. onsemi.com 4 ac electrical characteristics (t a = ?40 c to +85 c) symbo l parameter test conditions v cc (v) t a = +25 c t a = ?40 c to +85 c uni t figure number min typ max min max t phl t plh propagation delay bus to bus (note 9) v i = open 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 1.2 0.8 0.3 ns figures 2, 3 t pzl t pzh output enable time turn on time (a to b n ) v i = 2 v cc for t pzl v i = 0 v for t pzh 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 23 13 6.9 5.2 7.0 3.5 2.5 1.7 24 14 7.6 5.7 ns figures 2, 3 t plz t phz output disable time turn off time (a port to b port) v i = 2 v cc for t plz v i = 0 v for t phz 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 12.5 7.0 5.0 3.5 3.0 2.0 1.5 0.8 13 7.5 5.3 3.8 ns figures 2, 3 t bbm break before make time (note 8) r l = 50 c l = 35 pf 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns figure 4 q charge injection (note 8) c l = 0.1 nf, v gen = 0 v r gen = 0 5.0 3.3 7.0 3.0 pc figure 5 oirr off isolation (note 10) no r l = 50 f = 10 mhz 1.65?5.5 ?55 db figures 6, 16 oirr off isolation (note 10) nc r l = 50 f = 10 mhz 1.65?5.5 ?48 db figures 6, 16 xtalk crosstalk r l = 50 f = 10 mhz 1.65?5.5 ?54 db figure 7 bw ?3 db bandwidth r l = 50 2.5?5.5 250 mhz figures 10, 15 thd total harmonic distortion (note 8) r l = 600 0.5 v p?p f = 600 hz to 20 khz 2.5 5.0 0.014 0.004 % figure 11 capacitance (note 11) symbol parameter test conditions typ max unit figure number c in select pin input capacitance v cc = 0 v 2.3 pf c io?b b port off capacitance v cc = 5.0 v 6.5 pf figure 8 c ioa?on a port capacitance when switch is enabled v cc = 5.0 v 18.5 pf figure 9 8. guaranteed by design. 9. this parameter is guaranteed by design but not tested. the bus switch contributes no propagation delay other than the rc dela y of the on resistance of the switch and the 35 pf load capacitance, when driven by an ideal voltage source (zero output impedance). 10. off isolation = 20 log 10 [v a /v bn ]. 11. t a = +25 c, f = 1 mhz, capacitance is characterized but not tested in production.
nlas3158 www. onsemi.com 5 appendix a dc electrical extended automotive temperature range characteristics (note 14) symbo l parameter test conditions v cc (v) t a = +25 c t a = ?55 c to +125 c uni t min typ max min max v ih high level input v oltage 1.65?1.95 2.3?5.5 0.75 v cc 0.7 v cc v v il low level input v oltage 1.65?1.95 2.3?5.5 0.25 v cc 0.3 v cc v i in input leakage current 0 v in 5.5 v 0?5.5 0.05 0.1 1 a i off off state leakage current 0 a, b v cc 1.65?5.5 0.05 0.1 1 a r on switch on resistance (note 12) v in = 0 v, i o = 30 ma v in = 2.4 v, i o = ?30 ma v in = 4.5 v, i o = ?30 ma 4.5 3.0 5.0 7.0 8.5 13.0 15.0 v in = 0 v, i o = 24 ma v in = 3 v, i o = ?24 ma 3.0 4.0 10 11 20 v in = 0 v, i o = 8 ma v in = 2.3 v, i o = ?8 ma 2.3 5.0 13 12 30 v in = 0 v, i o = 4 ma v in = 1.65 v, i o = ?4 ma 1.65 6.5 17 20 50 i cc quiescent supply current all channels on or off v in = v cc or gnd i out = 0 5.5 1.0 10 a analog signal range v cc 0 v cc 0 v cc v r range on resistance over signal range (note 12) (note 13) i a = ?30 ma, 0 v bn v cc i a = ?24 ma, 0 v bn v cc i a = ?8 ma, 0 v bn v cc i a = ?4 ma, 0 v bn v cc 4.5 3.0 2.3 1.65 25 50 100 300 12. measured by the voltage drop between a and b pins at the indicated current through the switch. on resistance is determined b y the lower of the voltages on the two (a or b ports). 13. guaranteed by design. 14. for r on , r flat see ?40 c to +85 c section.
nlas3158 www. onsemi.com 6 appendix a ac electrical extended automotive temperature range characteristics symbo l parameter test conditions v cc (v) t a = +25 c t a = ?55 c to +125 c uni t figure number min typ max min max t phl t plh propagation delay bus to bus (note 16) v i = open 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 1.2 0.8 0.3 ns figures 2, 3 t pzl t pzh output enable time turn on time (a to b n ) v i = 2 v cc for t pzl v i = 0 v for t pzh 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 23 13 6.9 5.2 7.0 3.5 2.5 1.7 24 14 9.0 7.0 ns figures 2, 3 t plz t phz output disable time turn off time (a port to b port) v i = 2 v cc for t plz v i = 0 v for t phz 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 12.5 7.0 5.0 3.5 3.0 2.0 1.5 0.8 13 7.5 6.5 5.0 ns figures 2, 3 t b?m break before make time (note 15) 1.65?1.95 2.3?2.7 3.0?3.6 4.5?5.5 0.5 0.5 0.5 0.5 ns figure 4 15. guaranteed by design. 16. this parameter is guaranteed by design but not tested. the bus switch contributes no propagation delay other than the rc del ay of the on resistance of the switch and the 50 pf load capacitance, when driven by an ideal voltage source (zero output impedance).
nlas3158 www. onsemi.com 7 t w v cc gnd v oh v ol 50% 10% 10% 50% 50% 90% 90% t f = 2.5 ns t r = 2.5 ns switch input output 50% t phl t plh v cc gnd v tri 50% 10% 10% 50% 50% 90% 90% t f = 2.5 ns t r = 2.5 ns select input output t pzl v tri output 50% t pzh v ol v oh t phz t plz v ol + 0.3 v v oh ? 0.3 v note: input driven by 50 source terminated in 50 note: c l includes load and stray capacitance note: input prr = 1.0 mhz; t w = 500 ns v i rd ru c l from output under test figure 2. ac test circuit figure 3. ac waveforms figure 4. break before make interval timing logic input v out t d 0.9 v out r l c l v out v in logic input a s b 0 b 1 ac loading and waveforms
nlas3158 www. onsemi.com 8 figure 5. charge injection test r l 1 m c l 100 pf v out logic input a s b n r gen v ge q = ( v out )(c l ) v out on off off v out logic input figure 6. off isolation figure 7. crosstalk s b n logic input 0 v or v ih 10 nf v cc analyzer a gnd 50 50 s b 0 10 nf v cc analyzer a gnd 50 signal generator 0 dbm 50 b 1 figure 8. channel off capacitance figure 9. channel on capacitance figure 10. bandwidth s b n 10 nf v cc a gnd signal generator 0 dbm 50 logic input 0 v or v cc s b n logic input 0 v or v cc 10 nf v cc a gnd capacitance meter s b n logic input 0 v or v cc 10 nf v cc a gnd capacitance meter f = 1 mhz f = 1 mhz ac loading and waveforms
nlas3158 www. onsemi.com 9 figure 11. t otal harmonic distortion vs. frequency 0.01 0.001 100 1000 10000 100000 frequency (hz) thd (%) 4.5 v 3.0 v 2.3 v
nlas3158 www. onsemi.com 10 figure 12. r on vs. v in vs. temperature @ v cc = 3.0 v 0 2 4 6 0.0 0.5 1.0 1.5 2.0 3.0 v in (v) r on ( ) figure 13. r on vs. v in vs. temperature @ v cc = 4.5 v 0 5 10 15 20 25 0.0 1.0 2.0 3.0 4.0 5.0 v in (v) r on ( ) figure 14. on?resistance vs. input voltage 0 4 8 12 0.0 1.0 2.0 3.0 r on ( ) v in (v) figure 15. bandwidth vs. frequency frequency (mhz) p out (db) 0.1 1000 10 1.0 0.01 0 ?2 figure 16. off?isolation vs. frequency frequency (mhz) 0 ?10 ?70 p out (db) figure 17. phase angle vs. frequency frequency (mhz) 35 25 ?15 phase (deg) 0.5 1.5 2.5 3.5 4.5 2.5 0.5 1.5 2.5 3.5 4.5 4.0 ?4 ?6 ?8 ?10 ?12 ?14 1.0 1000 100 10 0.1 ?20 ?30 ?40 ?50 ?60 1 1000 100 10 0.01 20 15 10 5 0 ?5 ?10 2.3 v 3.0 v 4.5 v ?55 c ?40 c 85 c 125 c 25 c 8 10 12 14 16 18 20 2 6 10 30 35 40 100 ?100 ?80 ?90 0.1 30 2.3 v 3.0 v 4.5 v 2.3 v 3.0 v 4.5 v 2.3 v 3.0 v 4.5 v ?55 c ?40 c 85 c 25 c 125 c
nlas3158 www. onsemi.com 11 device ordering information device order number package type tape & reel size ? nlas3158mnr2g wdfn12 (pb?free) 3000 unit / reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd801 1/d.
nlas3158 www. onsemi.com 12 package dimensions wdfn12 3.0x1.0, 0.5p case 485ag issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension b applies to terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. dim min max millimeters a 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.18 0.30 d 3.00 bsc e 1.00 bsc e 0.50 bsc l 0.20 0.40 0.15 c d e b a 2 x 2 x 12 x a a1 (a3) 0.15 c pin one reference 0.08 c 0.10 c c seating plane bottom view b e 12 x 0.10 b 0.05 a c c l 12 x side view top view note 3 16 7 12 10x on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent? marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its paten t rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or othe r applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death ma y occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidi aries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of per sonal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. sci llc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nlas3158/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your lo cal sales representative

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